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inchange semiconductor product specification 1 silicon npn power transistors 2SD1876 description ? ? with to-3pml package ? high speed ? high breakdown voltage ? high reliability ? built-in damper diode applications ? color tv horizontal deflection output ? color display horizontal deflection output pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 12 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1876 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 800 v v cesat collector-emitter saturation voltage i c =2a;i b =0.6a 5 v v besat base-emitter saturation voltage i c =2a;i b =0.6a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 | a i ces collector cut-off current v cb =1500v; r be =0 1.0 ma i ebo emitter cut-off current v eb =4v; i c =0 40 130 ma h fe-1 dc current gain i c =0.5a ; v ce =5v 8 h fe-2 dc current gain i c =2a ; v ce =5v 3 6 v f diode forward voltage i ec =3a 2.0 v t f fall time i c =3a;r l =66.7 |? i b1 =0.8a;i b2 =-1.6a;v cc =200v 0.1 0.3 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1876 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SD1876

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